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| Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2SB849 DESCRIPTION With TO-3PFa package Complement to type 2SD1110 Wide area of safe operation APPLICATIONS For use in low frequency power amplifier applications PINNING PIN 1 2 3 Base Collector Emitter DESCRIPTION Absolute maximum ratings(Ta=25ae ) SYMBOL VCBO VCEO VEBO IC PC Tj Tstg PARAMETER ANG INCH Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector power dissipation Junction temperature Storage temperature SEM E Open emitter Open base Open collector CONDITIONS OND IC TOR UC VALUE -120 -120 -7 -7 UNIT V V V A W ae ae TC=25ae 80 150 -55~150 Inchange Semiconductor Product Specification Silicon PNP Power Transistors CHARACTERISTICS Tj=25ae unless otherwise specified PARAMETER CONDITIONS MIN TYP. 2SB849 SYMBOL MAX UNIT VCEO(BR) Collector-emitter breakdown voltage IC=-10mA ;IB=0 -120 V VCEsat Collector-emitter saturation voltage IC=-5A ;IB=-0.5A -2.0 V VBEsat Base-emitter saturation voltage IC=-5A ;IB=-0.5A -2.0 V ICBO Collector cut-off current VCB=-120V; IE=0 -50 |I A IEBO Emitter cut-off current VEB=-6V; IC=0 -50 |I A hFE-1 DC current gain IC=-20mA ; VCE=-5V 20 hFE -2 DC current gain COB fT Output capacitance ANG CH IC=-1A ; VCE=-5V 40 200 IE=0 ; VCB=-10V;f=1MHz Transition frequency IN EMIC ES IC=-0.2A ; VCE=-5V DUC ON 340 14 TOR pF MHz 2 Inchange Semiconductor Product Specification Silicon PNP Power Transistors PACKAGE OUTLINE 2SB849 SEM GE HAN INC OND IC TOR UC Fig.2 Outline dimensions (unindicated tolerance:A 0.30mm) 3 |
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